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Frontiers in electronicsadvanced mod...

Fjeldly, Tor A.

Frontiers in electronicsadvanced modeling in nanoscale electron devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Frontiers in electronics/ editors, Benjamin Iñiguez, Tor A. Fjeldly.
其他題名:	advanced modeling in nanoscale electron devices /
其他作者:	Iñiguez, Benjamin.
出版者:	Singapore :World Scientific, : 2014.,
面頁冊數:	1 online resource (204 p.).
提要註:	This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp.
標題:	Nanoelectronics. -
電子資源:	http://www.worldscientific.com/worldscibooks/10.1142/9077#t=toc
ISBN:	9789814583190 (electronic bk.)

Frontiers in electronicsadvanced modeling in nanoscale electron devices /
Frontiers in electronicsadvanced modeling in nanoscale electron devices /[electronic resource] :editors, Benjamin Iñiguez, Tor A. Fjeldly. - Singapore :World Scientific,2014. - 1 online resource (204 p.). - Selected topics in electronics and systems ;v. 54. - Selected topics in electronics and systems ;v. 54..

Includes bibliographical references and index.

This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp.

ISBN: 9789814583190 (electronic bk.)

LCCN: 2015413758Subjects--Topical Terms:

405630
Nanoelectronics.

LC Class. No.: TK7874.84 / .F76 2014

Dewey Class. No.: 620.5

Frontiers in electronicsadvanced modeling in nanoscale electron devices /
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050 0 0 $a TK7874.84 $b .F76 2014
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245 0 0 $a Frontiers in electronics $h [electronic resource] : $b advanced modeling in nanoscale electron devices / $c editors, Benjamin Iñiguez, Tor A. Fjeldly.
260 $a Singapore : $b World Scientific, $c 2014.
300 $a 1 online resource (204 p.).
490 1 $a Selected topics in electronics and systems ; $v v. 54
504 $a Includes bibliographical references and index.
520 $a This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp.
588 0 $a Online resource; title from PDF title page (ebrary, viewed March 20, 2014).
650 0 $a Nanoelectronics. $3 405630
700 1 $a Iñiguez, Benjamin. $3 405627
700 1 $a Fjeldly, Tor A. $3 405628
830 0 $a Selected topics in electronics and systems ; $v v. 54. $3 405629
856 4 0 $u http://www.worldscientific.com/worldscibooks/10.1142/9077#t=toc

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